Open AccessDielectric Relaxation and Hopping Conduction in La2NiO4+δ
Author(s) -
WooHwan Jung
Publication year - 2013
Publication title -
journal of materials
Language(s) - English
Resource type - Journals
eISSN - 2314-4874
pISSN - 2314-4866
DOI - 10.1155/2013/169528
Subject(s) - condensed matter physics , arrhenius equation , activation energy , dielectric , relaxation (psychology) , thermal conduction , conductivity , electrical resistivity and conductivity , materials science , cole–cole equation , non blocking i/o , power law , atmospheric temperature range , physics , chemistry , thermodynamics , psychology , social psychology , biochemistry , optoelectronics , organic chemistry , statistics , mathematics , quantum mechanics , composite material , catalysis
An ac conductivity as well as dielectric relaxation property of La2NiO4.1 is reported in the temperature range of 77 K–130 K and in the frequency range of 20 Hz–1 MHz. Complex impedance plane plots show that the relaxation (conduction) mechanism in this material is purely a bulk effect arising from the semiconductive grain. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with the activation energy of ~0.09 eV. The frequency-dependent electrical data are also analyzed in the frame of ac conductivity formalism. The ac conductivity has been found to follow a power-law behavior at a limited temperature and frequency region where Anderson localization plays a significant role in the transport mechanism for La2NiO4.1
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