Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology | Zendy

Bojan Cavrić | Zendy; Edin Dolićanin | Zendy; Predrag Petronijević | Zendy; Milić M. Pejović | Zendy; Koviljka Stanković | Zendy

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Radiation Hardness of Flash Memory Fabricated in Deep-Submicron Technology

Author(s) -

Bojan Cavrić,

Edin Dolićanin,

Predrag Petronijević,

Milić M. Pejović,

Koviljka Stanković

Publication year - 2013

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2013/158792

Subject(s) - ionizing radiation , miniaturization , flash (photography) , radiation , reliability (semiconductor) , computer science , flash memory , optoelectronics , materials science , irradiation , optics , physics , embedded system , nanotechnology , nuclear physics , power (physics) , quantum mechanics

This paper discusses the current problem of the electronic memory reliability in terms of the ionizing radiation effects. The topic is actual since the high degree of components' miniaturization integrated into the flash memory causes the extreme sensitivity of this memory type to the ionizing radiation effects. The effects of ionizing radiation may cause changes in stored data, or even the physical destruction of the components. At the end, the experimentally and numerically obtained effects of radiation on specific flash memories are shown and discussed. The results obtained by laboratory and numerical experiments showed good agreement with each other and with the theoretically expected results

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