Reactive Pulsed Laser Deposition of Titanium Nitride Thin Films: Effect of Reactive Gas Pressure on the Structure, Composition, and Properties
Author(s) -
R. Krishnan,
C. David,
P.K. Ajikumar,
R. Nithya,
S. Tripura Sundari,
S. Dash,
B. K. Panigrahi,
M. Kamruddin,
A.K. Tyagi,
Vikram Jayaram,
Baldev Raj
Publication year - 2013
Publication title -
journal of materials
Language(s) - English
Resource type - Journals
eISSN - 2314-4874
pISSN - 2314-4866
DOI - 10.1155/2013/128986
Subject(s) - materials science , tin , titanium nitride , nanocrystalline material , thin film , analytical chemistry (journal) , crystallite , titanium , nitride , deposition (geology) , ellipsometry , pulsed laser deposition , nitriding , stoichiometry , metallurgy , composite material , layer (electronics) , nanotechnology , chemistry , paleontology , organic chemistry , chromatography , sediment , biology
Titanium nitride (TiN) thin films were deposited by reactive pulsed laser deposition (RPLD) technique. For the first time, the composition evaluated from proton elastic backscattering spectrometry, in a quantitative manner, revealed a dependence on the partial pressure of nitrogen from 1 to 10 Pa. Grazing incidence-XRD (GI-XRD) confirmed the formation of predominantly nanocrystalline TiN phase with a crystallite size of around 30 nm. The hardness showed maximum value of ~30 GPa when the composition is near stoichiometric and the friction coefficient was found to be as low as 0.3. In addition, a systematic optical response was observed as a function of deposition pressure from the surface of the TiN films using spectroscopic ellipsometry
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