Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films | Zendy

N. P. Subiramaniyam | Zendy; P. Thirunavukkarasu | Zendy; K. R. Murali | Zendy

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Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films

Author(s) -

N. P. Subiramaniyam,

P. Thirunavukkarasu,

K. R. Murali

Publication year - 2013

Publication title -

journal of coatings

Language(s) - English

Resource type - Journals

eISSN - 2356-7236

pISSN - 2314-6508

DOI - 10.1155/2013/109176

Subject(s) - gallium , copper indium gallium selenide solar cells , materials science , indium , copper , photoconductivity , electrical resistivity and conductivity , chalcopyrite , analytical chemistry (journal) , band gap , selenide , optoelectronics , solar cell , chemistry , metallurgy , selenium , chromatography , electrical engineering , engineering

Copper indium gallium selenide (CIGS) films were deposited for the first time by the brush electrodeposition technique. X-ray diffraction studies indicated the formation of single phase chalcopyrite CIGS. Lattice parameters, dislocation density, and strain were calculated. Band gap of the films increased from 1.12 eV to 1.63 eV as the gallium concentration increased. Room temperature transport parameters of the films, namely, resistivity increased from 0.10 ohm cm to 12 ohm cm, mobility decreased from 125 cm2V−1s−1 to 20.9 cm2V−1s−1, and carrier concentration decreased from 4.99 × 1017 cm−3 to 2.49 × 1016 cm−3 as the gallium concentration increased. Photosensitivity of the films increased linearly with intensity of illumination and with increase of applied voltage

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