Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells | Zendy

Bangwu Liu | Zendy; Sihua Zhong | Zendy; Jinhu Liu | Zendy; Yang Xia | Zendy; Chaobo Li | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Silicon Nitride Film by Inline PECVD for Black Silicon Solar Cells

Author(s) -

Bangwu Liu,

Sihua Zhong,

Jinhu Liu,

Yang Xia,

Chaobo Li

Publication year - 2012

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2012/971093

Subject(s) - plasma enhanced chemical vapor deposition , silicon nitride , black silicon , materials science , passivation , solar cell , silicon , microstructure , fourier transform infrared spectroscopy , chemical vapor deposition , optoelectronics , chemical engineering , nanotechnology , layer (electronics) , composite material , engineering

The passivation process is of significant importance to produce high-efficiency black silicon solar cell due to its unique microstructure. The black silicon has been produced by plasma immersion ion implantation (PIII) process. And the Silicon nitride films were deposited by inline plasma-enhanced chemical vapor deposition (PECVD) to be used as the passivation layer for black silicon solar cell. The microstructure and physical properties of silicon nitride films were characterized by scanning electron microscope (SEM), Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, and the microwave photoconductance decay (μ-PCD) method. With optimizing the PECVD parameters, the conversion efficiency of black silicon solar cell can reach as high as 16.25%

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research