Open AccessThe Improvement of Reliability of High-k/Metal Gate pMOSFET Device with Various PMA Conditions
Author(s) -
Yi-Lin Yang,
Wenqi Zhang,
C. Y. Cheng,
Wen-Kuan Yeh
Publication year - 2012
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/2012/872494
Subject(s) - metal gate , materials science , annealing (glass) , reliability (semiconductor) , optoelectronics , tin , threshold voltage , oxygen , gate oxide , nitrogen , metal , oxide , leakage (economics) , electronic engineering , electrical engineering , voltage , chemistry , transistor , metallurgy , engineering , power (physics) , physics , organic chemistry , quantum mechanics , economics , macroeconomics
The oxygen and nitrogen were shown to diffuse through the TiN layer in the high-k/metal gate devices during PMA. Both the oxygen and nitrogen annealing will reduce the gate leakage current without increasing oxide thickness. The threshold voltages of the devices changed with various PMA conditions. The reliability of the devices, especially for the oxygen annealed devices, was improved after PMA treatments
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