High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers | Zendy

Shu-Hung Yu | Zendy; Wei Lin | Zendy; YuHung Chen | Zendy; ChunYen Chang | Zendy

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High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers

Author(s) -

Shu-Hung Yu,

Wei Lin,

YuHung Chen,

ChunYen Chang

Publication year - 2012

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2012/817825

Subject(s) - microcrystalline , materials science , germanium , silicon , electric field , microcrystalline silicon , energy conversion efficiency , analytical chemistry (journal) , optoelectronics , crystalline silicon , crystallography , physics , chemistry , amorphous silicon , chromatography , quantum mechanics

The improved performance for hydrogenated microcrystalline silicon-germanium (μc-Si1−xGex:H, x~0.1) p-i-n single solar cells with hydrogenated microcrystalline silicon (μc-Si:H) field-enhancement layers (FELs) is demonstrated for the first time. The fill factor (FF) and conversion efficiency (η) increase by about 19% and 28% when the thickness of the μc-Si FEL is increased from 0 to 200 nm, it is attributed to the longer hole life-time and enhanced electric field in the μc-Si0.9Ge0.1:H layer. Therefore, we can successfully manufacture high-performance μc-SiGe:H solar cells with the thickness of absorbers smaller than 1 μm by conducting FELs. Moreover, the simulation tool is used to simulate the current-voltage (J-V) curve, thus we can investigate the carrier transport in the absorber of μc-Si0.9Ge0.1:H solar cells with different EFLs

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