Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator | Zendy

Sylvain Laurent | Zendy; Jean-Christophe Nallatamby | Zendy; Michel Prigent | Zendy; M. Riet | Zendy; Virginie Nodjiadjim | Zendy

Open Access

Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

Author(s) -

Sylvain Laurent,

Jean-Christophe Nallatamby,

Michel Prigent,

M. Riet,

Virginie Nodjiadjim

Publication year - 2012

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2012/796973

Subject(s) - monolithic microwave integrated circuit , heterojunction bipolar transistor , amplifier , phase noise , cyclostationary process , transistor , materials science , bipolar junction transistor , optoelectronics , voltage controlled oscillator , dbc , common emitter , circuit design , electrical engineering , engineering , cmos , voltage , channel (broadcasting)

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured

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