Heteroepitaxial Growth of Ge Nanowires on Si Substrates | Zendy

Pietro Artoni | Zendy; Alessia Irrera | Zendy; Emanuele Francesco Pecora | Zendy; Simona Boninelli | Zendy; C. Spinella | Zendy; F. Priolo | Zendy

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Heteroepitaxial Growth of Ge Nanowires on Si Substrates

Author(s) -

Pietro Artoni,

Alessia Irrera,

Emanuele Francesco Pecora,

Simona Boninelli,

C. Spinella,

F. Priolo

Publication year - 2012

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2012/782835

Subject(s) - faceting , nanowire , materials science , germanium , evaporation , transmission electron microscopy , nanotechnology , crystal growth , scanning transmission electron microscopy , silicon , crystallography , optoelectronics , chemistry , physics , thermodynamics

Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained

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