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Quinhydrone Chemical Passivation of a Silicon Surface for Minority Carrier Bulk-Lifetime Measurements
Author(s) -
Marek Solčanský,
J. Vaněk,
A. Poruba
Publication year - 2012
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2012/732647
Subject(s) - passivation , wafer , carrier lifetime , silicon , materials science , optoelectronics , nanotechnology , layer (electronics)
For the measurement of the minority carrier bulk-lifetime the characterization method MW-PCD is used, where the result of measurement is the effective carrier lifetime, which is very dependent on the surface recombination velocity and therefore on the quality of a silicon surface passivation. This work deals with an examination of a different solution types for the chemical passivation of a silicon surface. Various solutions are tested on silicon wafers for their consequent comparison. The main purpose is to find optimal solution, which suits the requirements of a time stability and start-up velocity of passivation, reproducibility of the measurements and a possibility of a perfect cleaning of a passivating solution remains from a silicon surface, so that the parameters of a measured silicon wafer will not worsen and there will not be any contamination of the other wafers series in the production after a repetitive return of the measured wafer into the production process. The cleaning process itself is also a subject of a development

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