A Unified Channel Charges Expression for Analytic MOSFET Modeling | Zendy

Hugues Murray | Zendy; Patrick Martin | Zendy

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A Unified Channel Charges Expression for Analytic MOSFET Modeling

Author(s) -

Hugues Murray,

Patrick Martin

Publication year - 2012

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2012/652478

Subject(s) - transconductance , mosfet , microelectronics , inversion (geology) , field effect transistor , transistor , drain induced barrier lowering , channel (broadcasting) , physics , computational physics , electronic engineering , electrical engineering , engineering , optoelectronics , geology , paleontology , structural basin , voltage

Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL). The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users

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