Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer | Zendy

Jaehyoung Park | Zendy; Kichang Jung | Zendy; Ari Lee | Zendy; Hyojung Bae | Zendy; Daehwa Mun | Zendy; JunSeok Ha | Zendy; Young-Bu Mun | Zendy; E. M. Han | Zendy; Hang-Ju Ko | Zendy

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Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer

Author(s) -

Jaehyoung Park,

Kichang Jung,

Ari Lee,

Hyojung Bae,

Daehwa Mun,

JunSeok Ha,

Young-Bu Mun,

E. M. Han,

Hang-Ju Ko

Publication year - 2012

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2012/614320

Subject(s) - materials science , band gap , layer (electronics) , thin film , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , chromatography

Organic/inorganic hybrid solar cells were fabricated incorporating aluminum-doped zinc oxide (AZO) thin films of varying optical band gap in AZO/poly(2-methoxy-5-(2′-ethyl-hexyloxy)-p-phenylene vinylene) structures. The band gaps were controlled by varying the flow rates of Ar and O2 used to deposit the AZO. Devices with CdS buffer layer were also fabricated for improved efficiency. The effects of AZO optical band gap were assessed by testing the I–V characteristics of devices with structures of glass/ITO/AZO/MEH-PPV/Ag under AM1.5 illumination (100 mW/cm2). Efficiency was improved about 30 times by decreasing the AZO optical band gap, except in devices deposited without oxygen. A power conversion efficiency of 0.102% was obtained with the incorporation of a CdS buffer layer

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