Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film | Zendy

Mohammad Reza Khanlary | Zendy; E. Salavati | Zendy

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Optical Properties and Characterization of Prepared Sn-Doped PbSe Thin Film

Author(s) -

Mohammad Reza Khanlary,

E. Salavati

Publication year - 2012

Publication title -

advances in condensed matter physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.314

H-Index - 26

eISSN - 1687-8124

pISSN - 1687-8108

DOI - 10.1155/2012/587403

Subject(s) - lead selenide , materials science , doping , thin film , band gap , tin , irradiation , selenide , spectroscopy , ion , analytical chemistry (journal) , chemical vapor deposition , optoelectronics , nanotechnology , chemistry , metallurgy , selenium , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics

Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2 glass is described. Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy

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