Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method | Zendy

Kasra Behzad | Zendy; Wan Mahmood Mat Yunus | Zendy; Zainal Abidin Talib | Zendy; Azmi Zakaria | Zendy; Afarin Bahrami | Zendy; Esmaeil Shahriari | Zendy

Open Access

Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Author(s) -

Kasra Behzad,

Wan Mahmood Mat Yunus,

Zainal Abidin Talib,

Azmi Zakaria,

Afarin Bahrami,

Esmaeil Shahriari

Publication year - 2012

Publication title -

advances in optical technologies

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.124

H-Index - 25

eISSN - 1687-6407

pISSN - 1687-6393

DOI - 10.1155/2012/581743

Subject(s) - porous silicon , materials science , photoluminescence , photoacoustic spectroscopy , thermal diffusivity , silicon , etching (microfabrication) , porosity , gravimetric analysis , wafer , analytical chemistry (journal) , anodizing , band gap , spectroscopy , optoelectronics , composite material , chemistry , aluminium , physics , organic chemistry , layer (electronics) , quantum mechanics , chromatography

The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples

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