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Microcrystalline-Silicon-Oxide-Based N-Type Reflector Structure in Micromorph Tandem Solar Cells
Author(s) -
Chiung-Nan Li,
Hsuan-Yin Fang,
YuHung Chen,
Chun-Ming Yeh,
Chian-Fu Huang,
YuChih Wang,
KaiHsiang Hung,
Yen-Yu Pan,
ChienLiang Wu,
Yuru Chen,
JunChin Liu,
Chun-Heng Chen
Publication year - 2012
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2012/513238
Subject(s) - microcrystalline , analytical chemistry (journal) , materials science , font , matrix (chemical analysis) , optics , physics , crystallography , chemistry , computer science , composite material , artificial intelligence , organic chemistry
N-type microcrystalline silicon oxide thin films (n-c-SiO:H) have been deposited by VHF-PECVD (40 MHz) with reactant gas mixtures of CO2/SiH4 and H2. N-c-SiO thin films exhibiting low refractive index value (n600nm∼2), and medium/high conductivity (≧10−9 S/cm) are suitable to be used as an “n-type reflector” in micromorph tandem solar cells. Transmission electron microscopy (TEM) results show that microstructures of n-c-SiO:H thin films contain nanocrystalline Si particles, which are randomly embedded in the a-SiO matrix. This specific microstructure provides n-c-SiO:H thin films excellent optoelectronic properties; therefore, n-c-SiO:H thin films are appropriate candidates for “n-type reflector” structures in Si tandem solar cells

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