A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current | Zendy

Bradley D. Christiansen | Zendy; Eric R. Heller | Zendy; Ronald A. Coutu | Zendy; Ramakrishna Vetury | Zendy; J.B. Shealy | Zendy

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A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

Author(s) -

Bradley D. Christiansen,

Eric R. Heller,

Ronald A. Coutu,

Ramakrishna Vetury,

J.B. Shealy

Publication year - 2012

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2012/493239

Subject(s) - high electron mobility transistor , optoelectronics , materials science , current (fluid) , breakdown voltage , gallium nitride , biasing , diode , threshold voltage , degradation (telecommunications) , voltage , electrical engineering , transistor , engineering , nanotechnology , layer (electronics)

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (

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