Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD | Zendy

S. Ktifa | Zendy; Mondher Ghrib | Zendy; F. Saadallah | Zendy; H. Ezzaouïa | Zendy; N. Yacoubi | Zendy

Open Access

Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

Author(s) -

S. Ktifa,

Mondher Ghrib,

F. Saadallah,

H. Ezzaouïa,

N. Yacoubi

Publication year - 2012

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2012/418924

Subject(s) - plasma enhanced chemical vapor deposition , materials science , nanocrystalline material , photothermal therapy , porous silicon , photoluminescence , silicon , band gap , spectroscopy , nanocrystalline silicon , thin film , photothermal spectroscopy , chemical engineering , chemical vapor deposition , aluminium , optoelectronics , nanotechnology , composite material , crystalline silicon , physics , quantum mechanics , amorphous silicon , engineering

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

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