Alumina and Hafnia ALD Layers for a Niobium-Doped Titanium Oxide Photoanode | Zendy

Naji Al Dahoudi | Zendy; Qifeng Zhang | Zendy; Guozhong Cao | Zendy

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Alumina and Hafnia ALD Layers for a Niobium-Doped Titanium Oxide Photoanode

Author(s) -

Naji Al Dahoudi,

Qifeng Zhang,

Guozhong Cao

Publication year - 2012

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2012/401393

Subject(s) - hafnia , photocurrent , atomic layer deposition , materials science , open circuit voltage , doping , dye sensitized solar cell , energy conversion efficiency , niobium , titanium , titanium dioxide , titanium oxide , layer (electronics) , optoelectronics , chemical engineering , nanotechnology , voltage , electrode , chemistry , electrolyte , composite material , metallurgy , physics , cubic zirconia , ceramic , quantum mechanics , engineering

Niobium-doped titanium dioxide (TiO2) nanoparticles were used as a photoanode in dye-sensitized solar cells (DSCs). They showed a high photocurrent density due to their higher conductivity; however, a low open-circuit voltage was exhibited due to the back-reaction of photogenerated electrons. Atomic layer deposition is a useful technique to form a conformal ultrathin layer of Al2O3 and HfO, which act as an energy barrier to suppress the back electrons from reaching the redox medium. This resulted in an increase of the open-circuit voltage and therefore led to higher performance. HfO showed an improvement of the light-to-current conversion efficiency by 74%, higher than the 21% enhancement obtained by utilizing Al2O3 layers

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