Isothermal and Two-Temperature Zone Selenization of Mo Layers | Zendy

L. Kaupmees | Zendy; M. Altosaar | Zendy; Olga Volobujeva | Zendy; T. Raadik | Zendy; M. Grossberg | Zendy; Mati Danilson | Zendy; E. Mellikov | Zendy; Paul Barvinschi | Zendy

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Isothermal and Two-Temperature Zone Selenization of Mo Layers

Author(s) -

L. Kaupmees,

M. Altosaar,

Olga Volobujeva,

T. Raadik,

M. Grossberg,

Mati Danilson,

E. Mellikov,

Paul Barvinschi

Publication year - 2012

Publication title -

advances in materials science and engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.356

H-Index - 42

eISSN - 1687-8442

pISSN - 1687-8434

DOI - 10.1155/2012/345762

Subject(s) - materials science

Glass/Mo, Mo foil, glass/Mo/In, and glass/Mo/Cu stacked layers were selenized in closed vacuum tubes by isothermal and/or two-temperature zone annealing in Se vapors. The selenization process was studied dependent on Se vapor pressure, temperature and time. Samples were selenized from 375 to 580°C for 30 and 60 minutes. The applied Se pressure was varied between 130 and 4.4⋅103 Pa. The increase of MoSe2 film thickness was found to depend on the origin of Mo. MoSe2 thickness dL on Mo-foil was much higher than on sputtered Mo layers, and it depended linearly on time and as a power function dL~PSe1/2 on Se vapor pressure. The residual oxygen content in the formed MoSe2 layers was much lower in the two-zone selenization process. If Mo was covered with Cu or In before selenization, these were found to diffuse into formed MoSe2 layer. All the MoSe2 layers showed p-type conductivity

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