Open AccessRaman Amplifier Based on Amorphous Silicon Nanoparticles
Author(s) -
Maria Antonietta Ferrara,
Ivo Rendina,
Soumendra N. Basu,
Luca Dal Negro,
Luigi Sirleto
Publication year - 2011
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2012/254946
Subject(s) - materials science , raman spectroscopy , silicon , raman scattering , amorphous silicon , optoelectronics , amorphous solid , silicon nitride , laser , nanoparticle , amplifier , superlattice , optics , nanotechnology , crystalline silicon , chemistry , cmos , crystallography , physics
The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers
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