Structural and Optical Characteristics ofγ-In2Se3Nanorods Grown on Si Substrates | Zendy

Min-De Yang | Zendy; Chiung-Yuan Hu | Zendy; Shih-Chang Tong | Zendy; JiLin Shen | Zendy; S.M. Lan | Zendy; C.H. Wu | Zendy; TaiYuan Lin | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Structural and Optical Characteristics ofγ-In₂Se₃Nanorods Grown on Si Substrates

Author(s) -

Min-De Yang,

Chiung-Yuan Hu,

Shih-Chang Tong,

JiLin Shen,

S.M. Lan,

C.H. Wu,

TaiYuan Lin

Publication year - 2011

Publication title -

journal of nanomaterials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.463

H-Index - 66

eISSN - 1687-4129

pISSN - 1687-4110

DOI - 10.1155/2011/976262

Subject(s) - nanorod , materials science , high resolution transmission electron microscopy , selected area diffraction , photoluminescence , metalorganic vapour phase epitaxy , exciton , band gap , chemical vapor deposition , transmission electron microscopy , electron diffraction , phase (matter) , nanotechnology , diffraction , analytical chemistry (journal) , optoelectronics , optics , epitaxy , condensed matter physics , chemistry , physics , organic chemistry , layer (electronics) , chromatography

This study attempted to grow single-phase γ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase. The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy of γ-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research