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This study attempted to grow single-phase γ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase. The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy of γ-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption

Structural and Optical Characteristics ofγ-In2Se3Nanorods Grown on Si Substrates

Structural and Optical Characteristics ofγ-In₂Se₃Nanorods Grown on Si Substrates