Temperature Dependence of GaN HEMT Small Signal Parameters | Zendy

Ali M. Darwish | Zendy; Amr A. Ibrahim | Zendy; H. Alfred Hung | Zendy

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Temperature Dependence of GaN HEMT Small Signal Parameters

Author(s) -

Ali M. Darwish,

Amr A. Ibrahim,

H. Alfred Hung

Publication year - 2011

Publication title -

international journal of microwave science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.125

H-Index - 11

eISSN - 1687-5834

pISSN - 1687-5826

DOI - 10.1155/2011/945189

Subject(s) - transconductance , high electron mobility transistor , capacitance , materials science , atmospheric temperature range , signal (programming language) , optoelectronics , monolithic microwave integrated circuit , electrical impedance , electrical engineering , transistor , engineering , physics , computer science , electrode , amplifier , quantum mechanics , voltage , cmos , meteorology , programming language

This study presents the temperature dependence of small signal parameters of GaN/SiC HEMTs across the 0–150°C range. The changes with temperature for transconductance (m), output impedance (ds and ds), feedback capacitance (dg), input capacitance (gs), and gate resistance (g) are measured. The variations with temperature are established for m, ds, ds, dg, gs, and g in the GaN technology. This information is useful for MMIC designs

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