Modeling of Photoconductivity of Porous Silicon | Zendy

Liubomyr S. Monastyrskii | Zendy; B. S. Sokolovskiı̆ | Zendy; M. R. Pavlyk | Zendy; Petro P. Parandii | Zendy

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Modeling of Photoconductivity of Porous Silicon

Author(s) -

Liubomyr S. Monastyrskii,

B. S. Sokolovskiı̆,

M. R. Pavlyk,

Petro P. Parandii

Publication year - 2011

Publication title -

advances in optoelectronics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.118

H-Index - 21

eISSN - 1687-5648

pISSN - 1687-563X

DOI - 10.1155/2011/896962

Subject(s) - photoconductivity , materials science , radius , silicon , relaxation (psychology) , optoelectronics , condensed matter physics , physics , computer science , psychology , social psychology , computer security

The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers. By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed

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