Open AccessProposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
Author(s) -
Yasuhisa Ōmura
Publication year - 2011
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/2011/850481
Subject(s) - silicon on insulator , mosfet , materials science , optoelectronics , threshold voltage , band gap , electrical engineering , voltage , silicon , transistor , engineering
We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for <700K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications
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