Modelling of an Esaki Tunnel Diode in a Circuit Simulator
Author(s) -
Nikhil M. Kriplani,
Stephen Bowyer,
Jennifer Huckaby,
M.B. Steer
Publication year - 2011
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/2011/830182
Subject(s) - tunnel diode , nonlinear system , diode , control theory (sociology) , simulation , computer science , engineering , mechanics , physics , electrical engineering , artificial intelligence , control (management) , quantum mechanics
A method for circuit-level modelling a physically realistic Esaki tunnel diode model is presented. A paramaterisation technique that transforms the strongly nonlinear characteristic of a tunnel diode into two relatively modest nonlinear characteristics is demonstrated. The introduction of an intermediate state variable results in a physically realistic mathematical model that is not only moderately nonlinear and therefore robust, but also single-valued
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom