Open AccessCharacterization of Series Resistance and Mobility Degradation Parameter and Optimizing Choice of Oxide Thickness in Thin OxideN-Channel MOSFET
Author(s) -
Noureddine Maouhoub,
Khalid Rais
Publication year - 2011
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/2011/713129
Subject(s) - equivalent series resistance , mosfet , exponential function , oxide , degradation (telecommunications) , materials science , series (stratigraphy) , channel (broadcasting) , surface finish , amplitude , surface roughness , electronic engineering , optoelectronics , computational physics , mathematical analysis , analytical chemistry (journal) , mathematics , chemistry , physics , electrical engineering , optics , composite material , engineering , transistor , voltage , geology , chromatography , paleontology , metallurgy
We present two methods to extract the series resistance and the mobility degradation parameter in short-channel MOSFETs. The principle of the first method is based on the comparison between the exponential model and the classical model of effective mobility and for the second method is based on directly calculating the two parameters by solving a system of two equations obtained by using two different points in strong inversion at small drain bias from the characteristic (). The results obtained by these techniques have shown a better agreement with data measurements and allowed in the same time to determine the surface roughness amplitude and its influence on the maximum drain current and give the optimal oxide thickness
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom