Mesoporous In2O3: Effect of Material Structure on the Gas Sensing
Author(s) -
Zhihui Cheng,
Xiaohui Ren,
Jiaqiang Xu,
Qin Pan
Publication year - 2011
Publication title -
journal of nanomaterials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.463
H-Index - 66
eISSN - 1687-4129
pISSN - 1687-4110
DOI - 10.1155/2011/654715
Subject(s) - materials science , mesoporous material , adsorption , copolymer , semiconductor , chemical engineering , sensitivity (control systems) , nanotechnology , analytical chemistry (journal) , composite material , optoelectronics , chromatography , chemistry , polymer , electronic engineering , organic chemistry , catalysis , engineering
We present a semiconductor gas sensor based on mesoporous In2O3 (m-In2O3). The m-In2O3 was successfully fabricated by a simple sol-gel process, using block copolymer PE6800 as a soft template. The results of gas sensing reveal that the m-In2O3 prepared at room temperature shows higher resistance, which plays the key role in its greater sensitivity. The pore structure of material has an influence on gas adsorption on the material surface, which further affects response-recovery time of gas sensor
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