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Electroless deposition for fabricating copper (Cu) interconnects of integratedcircuits has drawn attention due to its low processing temperature,high deposition selectivity, and high coverage. In this paper, three-dimensionalcomputer simulations of the qualitative growth properties of Cuparticles and two-dimensional simulations of the trench-filling properties areconducted. The mathematical model employed in the study is a reaction-diffusionequation. An implicit finite difference discretization with a red-blackGauss-Seidel method as a solver is proposed for solving the reaction-diffusionequation. The simulated deposition properties agree with thoseobserved in experimentation. Alternatives to improve the deposition propertiesare also discussed

Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films