Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films | Zendy

HsiuChuan Wei | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Qualitative Simulation of the Growth of Electrolessly Deposited Cu Thin Films

Author(s) -

HsiuChuan Wei

Publication year - 2011

Publication title -

mathematical problems in engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.262

H-Index - 62

eISSN - 1026-7077

pISSN - 1024-123X

DOI - 10.1155/2011/528351

Subject(s) - discretization , deposition (geology) , trench , solver , diffusion , finite difference method , materials science , copper , diffusion barrier , mathematics , nanotechnology , mathematical analysis , thermodynamics , metallurgy , physics , mathematical optimization , layer (electronics) , paleontology , sediment , biology

Electroless deposition for fabricating copper (Cu) interconnects of integratedcircuits has drawn attention due to its low processing temperature,high deposition selectivity, and high coverage. In this paper, three-dimensionalcomputer simulations of the qualitative growth properties of Cuparticles and two-dimensional simulations of the trench-filling properties areconducted. The mathematical model employed in the study is a reaction-diffusionequation. An implicit finite difference discretization with a red-blackGauss-Seidel method as a solver is proposed for solving the reaction-diffusionequation. The simulated deposition properties agree with thoseobserved in experimentation. Alternatives to improve the deposition propertiesare also discussed

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research