Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs | Zendy

Yasuhiko Terada | Zendy; Shoji Yoshida | Zendy; Osamu Takeuchi | Zendy; Hidemi Shigekawa | Zendy

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Laser-Combined Scanning Tunneling Microscopy on the Carrier Dynamics in Low-Temperature-Grown GaAs/AlGaAs/GaAs

Author(s) -

Yasuhiko Terada,

Shoji Yoshida,

Osamu Takeuchi,

Hidemi Shigekawa

Publication year - 2011

Publication title -

advances in optical technologies

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.124

H-Index - 25

eISSN - 1687-6407

pISSN - 1687-6393

DOI - 10.1155/2011/510186

Subject(s) - heterojunction , materials science , quantum tunnelling , carrier lifetime , scanning tunneling microscope , optoelectronics , laser , excited state , gallium arsenide , electric field , optics , atomic physics , physics , nanotechnology , silicon , quantum mechanics

We investigated carrier recombination dynamics in a low-temperature-grown GaAs (LT-GaAs)/AlGaAs/GaAs heterostructure by laser-combined scanning tunneling microscopy, shaken-pulse-pair-excited STM (SPPX-STM). With the AlGaAs interlayer as a barrier against the flow of photocarriers, recombination lifetimes in LT-GaAs of 4.0 ps and GaAs of 4.8 ns were successfully observed separately. We directly demonstrated the high temporal resolution of SPPX-STM by showing the recombination lifetime of carriers in LT-GaAs (4.0 ps) in the range of subpicosecond temporal resolution. In the carrier-lifetime-mapping measurement, a blurring of recombination lifetime up to 50 nm was observed at the LT-GaAs/AlGaAs boundary, which was discussed in consideration of the screening length of the electric field from the STM probe. The effect of the built-in potential on the signal, caused by the existence of LT-GaAs/AlGaAs/GaAs boundaries, was discussed in detail

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