Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells | Zendy

Udai P. Singh | Zendy; Surya P. Patra | Zendy

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Progress in Polycrystalline Thin-Film Cu(In,Ga)Se2Solar Cells

Author(s) -

Udai P. Singh,

Surya P. Patra

Publication year - 2010

Publication title -

international journal of photoenergy

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.426

H-Index - 51

eISSN - 1687-529X

pISSN - 1110-662X

DOI - 10.1155/2010/468147

Subject(s) - copper indium gallium selenide solar cells , thin film , materials science , solar cell , optoelectronics , semiconductor , alloy , photovoltaic system , band gap , nanotechnology , composite material , electrical engineering , engineering

For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGa)Se2 or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed

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