Improving Performance of InGaN/GaN Light‐Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters | Zendy

Min-De Yang | Zendy; SzuLin Wu | Zendy; G. W. Shu | Zendy; Jiaxi Wang | Zendy; J. L. Shen | Zendy; C.H. Wu | Zendy; ChengAn J. Lin | Zendy; Walter H. Chang | Zendy; Tai-Yuan Lin | Zendy; TienChang Lu | Zendy; HaoChung Kuo | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Improving Performance of InGaN/GaN Light‐Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters

Author(s) -

Min-De Yang,

SzuLin Wu,

G. W. Shu,

Jiaxi Wang,

J. L. Shen,

C.H. Wu,

ChengAn J. Lin,

Walter H. Chang,

Tai-Yuan Lin,

TienChang Lu,

HaoChung Kuo

Publication year - 2009

Publication title -

journal of nanomaterials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.463

H-Index - 66

eISSN - 1687-4129

pISSN - 1687-4110

DOI - 10.1155/2009/840791

Subject(s) - nanoclusters , materials science , light emitting diode , optoelectronics , electroluminescence , luminescence , diode , quantum efficiency , nanotechnology , layer (electronics)

We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research