Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD | Zendy

G. Zatryb | Zendy; A. Podhorodecki | Zendy; J. Misiewicz | Zendy; J. Wójcik | Zendy; Peter Mascher | Zendy

Open Access

Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD

Author(s) -

G. Zatryb,

A. Podhorodecki,

J. Misiewicz,

J. Wójcik,

Peter Mascher

Publication year - 2009

Publication title -

journal of nanotechnology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.347

H-Index - 29

eISSN - 1687-9511

pISSN - 1687-9503

DOI - 10.1155/2009/769142

Subject(s) - materials science , silicon , silicon oxide , nanocrystal , analytical chemistry (journal) , nanotechnology , silicon nitride , optoelectronics , chemistry , chromatography

Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with Er3+ ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc to Er3+ ions is discussed

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