z-logo
open-access-imgOpen Access
Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications
Author(s) -
Tevye Kuykendall,
Shaul Aloni,
Ilan JenLa Plante,
Taleb Mokari
Publication year - 2009
Publication title -
international journal of photoenergy
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.426
H-Index - 51
eISSN - 1687-529X
pISSN - 1110-662X
DOI - 10.1155/2009/767951
Subject(s) - materials science , photoluminescence , chemical vapor deposition , metalorganic vapour phase epitaxy , nanowire , scanning electron microscope , band gap , transmission electron microscopy , nanostructure , nanotechnology , optoelectronics , diffraction , chemical engineering , nanoparticle , spectroscopy , optics , composite material , epitaxy , physics , engineering , layer (electronics) , quantum mechanics
We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD)

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom