Growth Mechanism of Cubic-Silicon Carbide Nanowires | Zendy

Kuan Yew Cheong | Zendy; Zainovia Lockman | Zendy

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Growth Mechanism of Cubic-Silicon Carbide Nanowires

Author(s) -

Kuan Yew Cheong,

Zainovia Lockman

Publication year - 2009

Publication title -

journal of nanomaterials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.463

H-Index - 66

eISSN - 1687-4129

pISSN - 1687-4110

DOI - 10.1155/2009/572865

Subject(s) - materials science , nanowire , silicon carbide , substrate (aquarium) , diffusion , chemical engineering , layer (electronics) , nanostructure , silicon , nanotechnology , phase (matter) , atomic diffusion , carbide , pyramid (geometry) , vapor phase , crystallography , composite material , metallurgy , oceanography , physics , chemistry , organic chemistry , engineering , thermodynamics , geology , optics

Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires

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