Schottky Diodes and Thin Films Based on Copolymer: Poly(aniline-co-toluidine) | Zendy

A. Elmansouri | Zendy; N. Hadik | Zendy; A. Outzourhit | Zendy; A. Lachkar | Zendy; A. Abouelaoualim | Zendy; M. E. Achour | Zendy; A. Oueriagli | Zendy; E.L. Ameziane | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Schottky Diodes and Thin Films Based on Copolymer: Poly(aniline-co-toluidine)

Author(s) -

A. Elmansouri,

N. Hadik,

A. Outzourhit,

A. Lachkar,

A. Abouelaoualim,

M. E. Achour,

A. Oueriagli,

E.L. Ameziane

Publication year - 2009

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2009/378086

Subject(s) - materials science , indium tin oxide , aniline , copolymer , thin film , schottky diode , polymerization , chemical engineering , electrode , monomer , polymer chemistry , diode , optoelectronics , composite material , chemistry , nanotechnology , organic chemistry , polymer , engineering

Poly(aniline-co-o-toluidine) (PANI-co-POT) thin films were deposited on indium tin oxide- (ITO-) coated glass substrates by electrochemical polymerization under cyclic voltammetric conditions from aniline-co-o-toluidine monomer in an aqueous solution of HCl as a supporting electrolyte. These measurements showed that the optical band gap of the copolymer films is on the order of 2.65 eV. On the other hand, ITO/PANI-co-POT/Al devices were fabricated by thermal evaporation of Aluminum circular electrodes on the as-deposited PANI-co-POT films. The Current-Voltage characteristics of these devices are nonlinear. The diode parameters were calculated from I-V characteristics using the modified Shockley equation. The C-F characteristics were also measured

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research