Anion Effect of Zinc Source on Chemically Deposited ZnS(O,OH) Films | Zendy

K. Ernits | Zendy; Katri Muska | Zendy; Mati Danilson | Zendy; J. Raudoja | Zendy; T. Varema | Zendy; Olga Volobujeva | Zendy; M. Altosaar | Zendy

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Anion Effect of Zinc Source on Chemically Deposited ZnS(O,OH) Films

Author(s) -

K. Ernits,

Katri Muska,

Mati Danilson,

J. Raudoja,

T. Varema,

Olga Volobujeva,

M. Altosaar

Publication year - 2009

Publication title -

advances in materials science and engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.356

H-Index - 42

eISSN - 1687-8442

pISSN - 1687-8434

DOI - 10.1155/2009/372708

Subject(s) - zinc , band gap , chemical bath deposition , materials science , zinc nitrate , ion , deposition (geology) , thin film , nuclear chemistry , analytical chemistry (journal) , inorganic chemistry , chemistry , nanotechnology , metallurgy , organic chemistry , paleontology , optoelectronics , sediment , biology

The study on the anion effect of different Zn sources—Zn(CH3COO)2, ZnCl2, ZnI2, Zn(NO3)2 and ZnSO4—on the chemical deposition of ZnS(O,OH) films revealed that the growth rate and composition of the ZnS(O,OH) layer depend on the instability constant (pK) value of the corresponding Zn-complex Zn(L)n in the chemical bath solution. In the region of pKZn(NH3)2+>pKZn(L)n the ZnS(O,OH) film's growth rate and ZnS concentration in films increased with the increasing pK value of the used Zn salt complex up to the pK value of the Zn[NH3]2+ complex and decreased in the region where pKZn(NH3)2+

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