Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology | Zendy

Sibylle Dieckerhoff | Zendy; Thies Wernicke | Zendy; Christine Kallmayer | Zendy; Stephan Guttowski | Zendy; H. Reichl | Zendy

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Improved Switching Characteristics of Fast Power MOSFETs Applying Solder Bump Technology

Author(s) -

Sibylle Dieckerhoff,

Thies Wernicke,

Christine Kallmayer,

Stephan Guttowski,

H. Reichl

Publication year - 2008

Publication title -

international journal of power management electronics

Language(s) - English

Resource type - Journals

eISSN - 1687-6687

pISSN - 1687-6679

DOI - 10.1155/2008/675173

Subject(s) - inductance , soldering , fast switching , electronic engineering , power (physics) , electronic packaging , materials science , electrical engineering , voltage , computer science , automotive engineering , engineering , composite material , physics , quantum mechanics

The impact of a reduced package stray inductance on the switching performance of fast power MOSFETs is discussed applying advanced 3D packaging technologies. Starting from an overview over new packaging approaches, a solder bump technology using a flexible PI substrate is exemplarily chosen for the evaluation. Measurement techniques to determine the stray inductance are discussed and compared with a numerical solution based on the PEEC method. Experimental results show the improvement of the voltage utilization while there is only a slight impact on total switching losses

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