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A complete design strategy (mechanical and electrical) for a 25Ã¢Â€Â‰W28Ã¢Â€Â‰V/5Ã¢Â€Â‰V dc-dc converter utilizing SiC and SOI electronics is presented. Theconverter includes a high-temperature SOI-based PWM controller featuring 150Ã¢Â€Â‰kHzoperation, a PID feedback loop, maximum duty cycle limit, complementary or symmetrical outputs,and a bootstrapped high-side gate driver. Several passive technologies were investigated for bothcontrol and power sections. Capacitor technologies were characterized over temperature and overtime at 300CÃ¢ÂˆÂ˜, power inductors designed and tested up to 350CÃ¢ÂˆÂ˜, and power transformers designed and tested up to 500CÃ¢ÂˆÂ˜. Northrop Grumman normally-off SiC JFETs were used as power switches    and were characterized up to 250CÃ¢ÂˆÂ˜. Efficiency and mass optimization routines were developed with the data gained    from the first prototype. The effects of radiation on SiC and SOI electronics are then discussed. The results    of the first prototype module are presented, with operation from 25CÃ¢ÂˆÂ˜ up to an ambient temperature of 240CÃ¢ÂˆÂ˜

High-Temperature SOI/SiC-Based DC-DC Converter Suite