Performance Analysis of Trench Power MOSFETs in High-Frequency Synchronous Buck Converter Applications
Author(s) -
Yali Xiong,
Xu Cheng,
Xiangcheng Wang,
Pavan Kumar,
Lina Guo,
Z. John Shen
Publication year - 2008
Publication title -
international journal of power management electronics
Language(s) - English
Resource type - Journals
eISSN - 1687-6687
pISSN - 1687-6679
DOI - 10.1155/2008/412175
Subject(s) - materials science , computer science
This paper investigates the performance perspectives and theoretical limitations of trench power MOSFETs in synchronous rectifier buck converters operating in the MHz frequency range. Several trench MOSFET technologies are studied using a mixed-mode device/circuit modeling approach. Individual power loss contributions from the control and synchronous MOSFETs, and their dependence on switching frequency between 500 kHz and 5 MHz are discussed in detail. It is observed that the conduction loss contribution decreases from 40% to 4% while the switching loss contribution increases from 60% to 96% as the switching frequency increases from 500 KHz to 5 MHz. Beyond 1 MHz frequency there is no obvious benefit to increase the die size of either SyncFET or CtrlFET. The RDS(ON)×QG figure of merit (FOM) still correlates well to the overall converter efficiency in the MHz frequency range. The efficiency of the hard switching buck topology is limited to 80% at 2 MHz and 65% at 5 MHz even with the most advanced trench MOSFET technologies
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