Open AccessEffect of Etching Parameter on Pore Size and Porosity of Electrochemically Formed Nanoporous Silicon
Author(s) -
Pushpendra Kumar,
Patrick Huber
Publication year - 2007
Publication title -
journal of nanomaterials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.463
H-Index - 66
eISSN - 1687-4129
pISSN - 1687-4110
DOI - 10.1155/2007/89718
Subject(s) - materials science , hydrofluoric acid , porosity , nanoporous , etching (microfabrication) , porous silicon , wafer , electrolyte , chemical engineering , fabrication , electrochemistry , silicon , current density , layer (electronics) , composite material , nanotechnology , electrode , optoelectronics , metallurgy , chemistry , medicine , alternative medicine , physics , pathology , quantum mechanics , engineering
The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom