A Monolithic High-G SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations | Zendy

Bradford S. Davis | Zendy; Timothy Denison | Zendy; Jinbo Kuang | Zendy

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A Monolithic High-G SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations

Author(s) -

Bradford S. Davis,

Timothy Denison,

Jinbo Kuang

Publication year - 2005

Publication title -

shock and vibration

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.418

H-Index - 45

eISSN - 1875-9203

pISSN - 1070-9622

DOI - 10.1155/2006/793564

Subject(s) - accelerometer , microelectromechanical systems , artillery , silicon on insulator , projectile , acceleration , inertial measurement unit , engineering , electrical engineering , materials science , aerospace engineering , optoelectronics , silicon , physics , computer science , classical mechanics , artificial intelligence , metallurgy , quantum mechanics

Analog Devices (ADI) has designed and fabricated a monolithic high-g acceleration sensor (ADXSTC3-HG) fabricated with the ADI silicon-on-insulator micro-electro-mechanical system (SOI-MEMS) process. The SOI-MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors with excellent cross-axis rejection. The high-g accelerometer discussed in this paper was designed to measure in-plane acceleration to 10,000 g while subjected to 100,000 g in the orthogonal axes. These requirements were intended to meet Army munition applications. The monolithic sensor was packaged in an 8-pin leadless chip carrier (LCC-8) and was successfully demonstrated by the US Army Research Laboratory (ARL) as part of an inertial measurement unit during an instrumented flight experiment of artillery projectiles launched at 15,000 g

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