The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films | Zendy

P. S. Raghupathi | Zendy; Joseph George | Zendy; C. S. Me | Zendy

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The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

Author(s) -

P. S. Raghupathi,

Joseph George,

C. S. Me

Publication year - 2005

Publication title -

journal of chemistry

Language(s) - English

Resource type - Journals

eISSN - 2090-9063

pISSN - 2090-9071

DOI - 10.1155/2005/879524

Subject(s) - electrical resistivity and conductivity , materials science , thin film , indium tin oxide , band gap , transmittance , deposition (geology) , crystallite , indium , evaporation , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , electrical engineering , paleontology , physics , engineering , chromatography , sediment , biology , thermodynamics

Indium tin oxide (ITO) thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline

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