Theoretical Investigation of Ultrathin Gate Dielectrics | Zendy

Alexander A. Demkov | Zendy; Xiaodong Zhang | Zendy; Heather Loechelt | Zendy

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Theoretical Investigation of Ultrathin Gate Dielectrics

Author(s) -

Alexander A. Demkov,

Xiaodong Zhang,

Heather Loechelt

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/98032

Subject(s) - dielectric , materials science , discontinuity (linguistics) , gate dielectric , high κ dielectric , optoelectronics , leakage (economics) , semiconductor , gate oxide , interface (matter) , oxide , electronic engineering , valence band , nanotechnology , engineering physics , electrical engineering , band gap , transistor , engineering , composite material , mathematical analysis , mathematics , capillary number , voltage , capillary action , economics , macroeconomics , metallurgy

We describe a theoretical methodology for screening potential gate dielectric materials.A recently proposed method for constructing realistic structural models of the Si-dielectricinterface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valenceband discontinuity at the corresponding interface. We use Landauer's ballistic transportapproach to investigate the low bias leakage through these ultrathin dielectric layers

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