An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution | Zendy

Sylvain Barraud | Zendy; Philippe Dollfus | Zendy; S. Galdin | Zendy; Raúl Rengel | Zendy; María J. Martín | Zendy; J.E. Velázquez-Pérez | Zendy

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An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution

Author(s) -

Sylvain Barraud,

Philippe Dollfus,

S. Galdin,

Raúl Rengel,

María J. Martín,

J.E. Velázquez-Pérez

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/96951

Subject(s) - monte carlo method , scattering , impurity , diffusion , statistical physics , computational physics , electron mobility , range (aeronautics) , distribution (mathematics) , dopant , mosfet , materials science , condensed matter physics , electron , doping , physics , optics , mathematics , statistics , mathematical analysis , quantum mechanics , transistor , voltage , composite material

An improved 3-D Monte Carlo simulation model is developed to treat the discreterandom dopant distribution in sub-0.1 μm MOSFET. The new atomistic model is basedon a scattering rate calculation and an algorithm that take into account many-body effectsand the local variations of screening length according to impurity distribution and biasconditions

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