English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

An improved 3-D Monte Carlo simulation model is developed to treat the discreterandom dopant distribution in sub-0.1 μm MOSFET. The new atomistic model is basedon a scattering rate calculation and an algorithm that take into account many-body effectsand the local variations of screening length according to impurity distribution and biasconditions

An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution