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In this study we have determined new coefficients for the physical model describing theband-gap narrowing and the minority carriers lifetime. This was accomplished accordingto the doping level of the thin emitter. This model allows us to take into account both theeffects of the heavy doping and the majority carrier degeneration for the very high levelof doping. The results we obtain by the corrected model are in good agreement withthose reported in the literature and in different experiments. They show us thepossibility of accurately evaluating the performances for the n+p silicon solar cell.This model is then used to introduce a new concept for the thin layer emitter, calledtransparent emitter

New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells