Hybrid Particle-based Full-band Analysis of Ultra-small MOS | Zendy

S.J. Wigger | Zendy; S. M. Goodnick | Zendy; Marco Saraniti | Zendy

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Hybrid Particle-based Full-band Analysis of Ultra-small MOS

Author(s) -

S.J. Wigger,

S. M. Goodnick,

Marco Saraniti

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/94360

Subject(s) - solver , computational physics , monte carlo method , cellular automaton , mosfet , computational science , computer science , scattering , electronic engineering , physics , simulation , engineering , electrical engineering , algorithm , voltage , transistor , optics , mathematics , statistics , programming language

We report on the 2D and 3D modeling of ultra-small MOS structures using a newly developed full-band device simulator. The simulation tool is based on a novel approach, featuring a hybrid Ensemble Monte Carlo (EMC)-Cellular Automata (CA) simulation engine. In this hybrid approach charge transport is simulated using the CA in regions of momentum space where most scattering events occur and the EMC elsewhere, thus optimizing the trade-off between the fast, but memory consuming CA method and the slower EMC method. To account for the spatial distribution of the electric field and charge concentration, the hybrid EMC/CA simulator is self-consistently coupled with a 2D and 3D multi-grid Poisson solver. The solver is then used to simulate the performance of a 40 nm gate length n-MOSFET structure

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