New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature | Zendy

Y. Amhouche | Zendy; A. Abbassi | Zendy; Khalid Rais | Zendy; E. Bendada | Zendy; R. Rmaily | Zendy

Open Access

New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature

Author(s) -

Y. Amhouche,

A. Abbassi,

Khalid Rais,

E. Bendada,

R. Rmaily

Publication year - 2001

Publication title -

active and passive electronic components

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.144

H-Index - 22

eISSN - 1026-7034

pISSN - 0882-7516

DOI - 10.1155/2001/92361

Subject(s) - saturation (graph theory) , mosfet , materials science , channel length modulation , liquid helium , voltage , channel (broadcasting) , helium , optoelectronics , extraction (chemistry) , ionization , threshold voltage , analytical chemistry (journal) , electrical engineering , transistor , chemistry , chromatography , engineering , ion , mathematics , organic chemistry , combinatorics

A new method for drain saturation voltage extraction in submicron MOSFETs ispresented. It is based on measurements of the partial derivative of the impact ionizationrate. The method has been tested using main of channel length MOSFET devices andcompared with others methods

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