Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices | Zendy

M. Trovato | Zendy; Luca Reggiani | Zendy

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Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

Author(s) -

M. Trovato,

Luca Reggiani

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.123

H-Index - 24

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/89617

Subject(s) - principle of maximum entropy , statistical physics , monte carlo method , entropy (arrow of time) , semiconductor , maximum entropy spectral estimation , second moment of area , scheme (mathematics) , semiconductor device , mathematics , physics , mathematical analysis , quantum mechanics , materials science , thermodynamics , statistics , layer (electronics) , composite material

By extending the maximum entropy principle within a scheme in total average energywe obtain a closed system of hydrodynamic equations for a full nonparabolic bandmodel in which all the unknown constitutive functions are completely determined. Thetheory is validated by comparing hydrodynamic calculations with Monte Carlosimulations performed for bulk and submicron Si structures at 300 K. In the generalframework of the moment theory a systematic study of small-signal response functionsis provided

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