Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics | Zendy

Warren J. Gross | Zendy; Dragica Vasileska | Zendy; D. K. Ferry | Zendy

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Ultra-small MOSFETs: The Importance of the Full Coulomb Interaction on Device Characteristics

Author(s) -

Warren J. Gross,

Dragica Vasileska,

D. K. Ferry

Publication year - 2001

Publication title -

vlsi design

Language(s) - English

Resource type - Journals

eISSN - 1065-514X

pISSN - 1026-7123

DOI - 10.1155/2001/78780

Subject(s) - coulomb , mosfet , coulomb's law , physics , relaxation (psychology) , range (aeronautics) , momentum (technical analysis) , voltage , coulomb barrier , interaction energy , energy (signal processing) , position and momentum space , condensed matter physics , computational physics , materials science , quantum mechanics , transistor , electron , finance , economics , composite material , psychology , social psychology , molecule

We discuss a full three-dimensional model of an ultra-small MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. The inclusion of the proper Coulomb interaction affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device. We find that the short-range e–e and e–i terms, combined with discrete impurity effects, is also needed for accurate measurement of the device threshold voltage.

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