z-logo
open-access-imgOpen Access
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h l) Silicon Plates in a NaOH 35% Solution. Part II: 3D Etching Shapes, Analysis and Comparison with KOH 56%
Author(s) -
C. R. Tellier,
C. A. Hodebourg,
Stéphane Durand
Publication year - 2001
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/2001/73462
Subject(s) - etching (microfabrication) , anisotropy , stereographic projection , surface micromachining , isotropic etching , dissolution , silicon , bulk micromachining , membrane , materials science , chemistry , crystallography , mineralogy , analytical chemistry (journal) , fabrication , geometry , nanotechnology , metallurgy , optics , chromatography , mathematics , physics , medicine , biochemistry , alternative medicine , layer (electronics) , pathology
This paper deals with the micromachining of various (h k 0) and (h h l) membrane–mesastructures in a NaOH 35% solution. Final etching shapes of micromachined structuresshow a marked anisotropy of type 1. Etching shapes are analysed in terms of thekinematic and tensorial model for the anisotropic dissolution of crystals. Some ofcrystallographic planes limiting membranes and mesa are identified from astereographic analysis of top contours. Conclusions of this study are in closeagreement with a previous work

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom